G
Goford Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
Goford SemiconductorG05N | Discrete Semiconductor Products | 2 | 1 | |
Goford SemiconductorG06N | Discrete Semiconductor Products | 1 | 1 | |
Goford SemiconductorG120 | FETs, MOSFETs | 1 | 1 | |
Goford SemiconductorG170 | Arrays | 1 | 1 | |
Goford SemiconductorG180 | Transistors | 1 | 1 | |
Goford SemiconductorG200 | FET, MOSFET Arrays | 1 | 1 | |
Goford SemiconductorG33N | Transistors | 1 | 1 | |
Goford SemiconductorG60 | FET, MOSFET Arrays | 1 | 1 | |
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Goford Semiconductor | 3 V | TO-263 | MOSFET (Metal Oxide) | 20 V | 24 A | 1902 pF | -55 °C | 150 °C | 65 mOhm | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 40 nC | 79 W | 4.5 V 10 V | 100 V | N-Channel | ||||||
Goford Semiconductor | 3 V | 8-SOP | MOSFET (Metal Oxide) | 20 V | 6 A | 2506 pF | -55 °C | 150 °C | 40 mOhm | Surface Mount | 8-SOIC | 10 V | 60 V | P-Channel | 3.9 mm | 0.154 in | 1.7 W | 46 nC | ||||
Goford Semiconductor | 3 V | TO-252 | MOSFET (Metal Oxide) | 20 V | 15 A | -55 °C | 150 °C | 45 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 25 nC | 40 W | 4.5 V 10 V | 60 V | N-Channel | 762 pF | ||||||
Goford Semiconductor | 3.8 V | Toll | MOSFET (Metal Oxide) | 20 V | 330 A | 8058 pF | -55 °C | 150 °C 175 ░C | 1.9 mOhm | Surface Mount | 8-PowerSFN | 10 V | 100 V | N-Channel | 395 W | 121 nC | ||||||
Goford Semiconductor | 2.5 V | 8-DFN (4.9x5.75) | MOSFET (Metal Oxide) | 20 V | 120 A | 2840 pF | -55 °C | 150 °C | 2.8 mOhm | Surface Mount | 8-PowerTDFN | 63 W | 4.5 V 10 V | 40 V | N-Channel | 95 nC | ||||||
Goford Semiconductor | 2.5 V | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 20 V | 50 A | 3074 pF | -55 °C | 150 °C | 10 mOhm | Surface Mount | 8-PowerVDFN | 45 nC | 60 W | 4.5 V 10 V | 30 V | P-Channel | ||||||
Goford Semiconductor | 2.5 V | 8-SOP | MOSFET (Metal Oxide) | 20 V | 5 A | -55 °C | 150 °C | 30 mOhm | Surface Mount | 8-SOIC | 50 nC | 2.1 W | 4.5 V 10 V | 60 V | N-Channel | 3.9 mm | 0.154 in | 1360 pF | ||||
Goford Semiconductor | 2.5 V | TO-220 | MOSFET (Metal Oxide) | 20 V | 150 A | 6561 pF | -55 °C | 150 °C | Through Hole | TO-220-3 | 117 nC | 130 W | 10 V | 40 V | N-Channel | 3.3 Ohm | ||||||
Goford Semiconductor | 2.4 V | 8-DFN (3.15x3.05) | MOSFET (Metal Oxide) | 20 V | 35 A | 1059 pF | -55 °C | 150 °C | 11 mOhm | Surface Mount | 8-PowerVDFN | 24 nC | 25 W | 4.5 V 10 V | 60 V | N-Channel | ||||||
Goford Semiconductor | 2.5 V | SOT-23-6L | MOSFET (Metal Oxide) | 20 V | 3 A | 1035 pF | -55 °C | 150 °C | 110 mOhm | Surface Mount | SOT-23-6 | 25 nC | 4.5 V 10 V | 60 V | P-Channel | 1.5 W |