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GT110N06D3 - G16P03D3

GT110N06D3

Active
Goford Semiconductor

N60V, 35A,RD<11M@10V,VTH1.0V~2.4

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GT110N06D3 - G16P03D3

GT110N06D3

Active
Goford Semiconductor

N60V, 35A,RD<11M@10V,VTH1.0V~2.4

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGT110N06D3
Current - Continuous Drain (Id) @ 25°C35 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds1059 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)25 W
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device Package8-DFN (3.15x3.05)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.04
10$ 0.65
100$ 0.43
500$ 0.33
1000$ 0.30
2000$ 0.27
Digi-Reel® 1$ 1.04
10$ 0.65
100$ 0.43
500$ 0.33
1000$ 0.30
2000$ 0.27
Tape & Reel (TR) 5000$ 0.24
10000$ 0.22
15000$ 0.22
25000$ 0.21

Description

General part information

GT110N06D3

N-Channel 60 V 35A (Tc) 25W (Tc) Surface Mount 8-DFN (3.15x3.05)

Documents

Technical documentation and resources