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GT023N10TL - GT016N10TL

GT023N10TL

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Goford Semiconductor

MOSFET N-CH 100V 330A TOLL-8

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GT023N10TL - GT016N10TL

GT023N10TL

Active
Goford Semiconductor

MOSFET N-CH 100V 330A TOLL-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGT023N10TL
Current - Continuous Drain (Id) @ 25°C330 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs121 nC
Input Capacitance (Ciss) (Max) @ Vds8058 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C, 150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]395 W
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackageToll
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.52
10$ 2.96
100$ 2.39
500$ 2.13
1000$ 1.82
Digi-Reel® 1$ 3.52
10$ 2.96
100$ 2.39
500$ 2.13
1000$ 1.82
Tape & Reel (TR) 2000$ 1.43
2000$ 1.71
6000$ 1.65
14000$ 1.32
28000$ 1.18

Description

General part information

GT023N10TL

N-Channel 100 V 330A (Tc) 395W (Tc) Surface Mount TOLL

Documents

Technical documentation and resources