G1K1P06LL

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Goford Semiconductor

P-60V,-4A,RD(MAX)<110M@-10V,VTH-

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Goford Semiconductor

P-60V,-4A,RD(MAX)<110M@-10V,VTH-

Technical Specifications

Parameters and characteristics for this part

Specification	G1K1P06LL

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1035 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

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