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G18P03D3 - G30N04D3

G18P03D3

Active
Goford Semiconductor

P30V,RD(MAX)<10M@-10V,RD(MAX)<15

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G18P03D3 - G30N04D3

G18P03D3

Active
Goford Semiconductor

P30V,RD(MAX)<10M@-10V,RD(MAX)<15

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationG18P03D3
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds3074 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device Package8-DFN (3.15x3.05)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.80
10$ 0.69
100$ 0.48
500$ 0.40
1000$ 0.34
Digi-Reel® 1$ 0.80
10$ 0.69
100$ 0.48
500$ 0.40
1000$ 0.34
Tape & Reel (TR) 3000$ 0.30
5000$ 0.20
6000$ 0.29
9000$ 0.27
15000$ 0.19
30000$ 0.26
30000$ 0.17

Description

General part information

G18P03D3

P-Channel 30 V 50A (Tc) 60W (Tc) Surface Mount 8-DFN (3.15x3.05)

Documents

Technical documentation and resources