MOSFET 2N-CH 60V 5A 8SOP
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Configuration | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Goford Semiconductor | Surface Mount | 26 nC | 35 mOhm | 2 N-Channel | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 5 A | -55 °C | 150 °C | 1374 pF | 2.5 V | 60 V | 8-SOP | 22 nC | |||
Goford Semiconductor | Surface Mount | 36 mOhm 80 mOhm | N and P-Channel | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 5 A | -55 °C | 150 °C | 1336 pF 1454 pF | 2 V 2.2 V | 60 V | 8-SOP | 22 nC | 37 nC | 3.1 A | 1.9 W 2.5 W |