G15N06K

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Goford Semiconductor

N-CH, 60V,15A,RD(MAX)<45M@10V,RD

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Goford Semiconductor

N-CH, 60V,15A,RD(MAX)<45M@10V,RD

Technical Specifications

Parameters and characteristics for this part

Specification	G15N06K

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	762 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

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