G048N04T

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Goford Semiconductor

MOSFET N-CH 40V 150A TO-220

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Goford Semiconductor

MOSFET N-CH 40V 150A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	G048N04T

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Input Capacitance (Ciss) (Max) @ Vds	6561 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs [Max]	3.3 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

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