G400P06S

Active

Goford Semiconductor

MOSFET, P-CH, 60V,6A,SOP-8

Search across all available documentation for this part.

Active

Goford Semiconductor

MOSFET, P-CH, 60V,6A,SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	G400P06S

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	2506 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	1.7 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly