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GT019N04D5 - G75P04D5

GT019N04D5

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Goford Semiconductor

MOSFET N-CH 40V 120A DFN5*6-8L

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GT019N04D5 - G75P04D5

GT019N04D5

Active
Goford Semiconductor

MOSFET N-CH 40V 120A DFN5*6-8L

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGT019N04D5
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds2840 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)63 W
Rds On (Max) @ Id, Vgs2.8 mOhm
Supplier Device Package8-DFN (4.9x5.75)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 5000$ 0.27
15000$ 0.24
30000$ 0.22

Description

General part information

GT019N04D5

N-Channel 40 V 120A (Tc) 63W (Tc) Surface Mount 8-DFN (4.9x5.75)

Documents

Technical documentation and resources