G08N06S

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Goford Semiconductor

N60V, RD(MAX)<30M@10V,RD(MAX)<40

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Goford Semiconductor

N60V, RD(MAX)<30M@10V,RD(MAX)<40

Technical Specifications

Parameters and characteristics for this part

Specification	G08N06S

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

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