GT750P10M
ActiveGoford Semiconductor
MOSFET P-CH 100V 24A TO-263
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GT750P10M
ActiveGoford Semiconductor
MOSFET P-CH 100V 24A TO-263
Deep-Dive with AI
DocumentsSOLDERING PROFILE
Technical Specifications
Parameters and characteristics for this part
| Specification | GT750P10M |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1902 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 79 W |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | TO-263 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 800 | $ 0.44 | |
| 8000 | $ 0.42 | |||
| 16000 | $ 0.41 | |||
| 32000 | $ 0.36 | |||
Description
General part information
GT750P10M
N-Channel 100 V 24A (Tc) 79W (Tc) Surface Mount TO-263
Documents
Technical documentation and resources