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SemiQ

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(26)

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Reverse Recovery Time (trr)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed	Current - Average Rectified (Io)	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Power Dissipation (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	IGBT Type	Test Condition	Gate Charge	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
SemiQ GP2D020A120B	1270 pF	40 µA	175 ░C	-55 C	No Recovery Time	1.2 kV	Through Hole	TO-247-2	1.8 V	TO-247-2	SiC (Silicon Carbide) Schottky	0 ns
SemiQ GCMX010A120B2B1P							Chassis Mount	Module			Silicon Carbide (SiC)		4 V	214 A	476 nC	750 W	-40 C	175 °C	1200 V	1.2 kV	12 mOhm	2 N-Channel (Half Bridge)	13100 pF
SemiQ GCMX020A120B2H1P							Chassis Mount	Module			Silicon Carbide (SiC)		4 V	102 A	222 nC	333 W	-40 C	175 °C	1200 V	1.2 kV	28 mOhm		5600 pF	4 N-Channel
SemiQ GSXF120A100S1-D3		25 µA	175 ░C	-55 C		1000 V	Chassis Mount	SOT-227-4 miniBLOC	2.35 V	SOT-227	Standard	135 ns													2 Independent	120 A	200 mA 500 ns
SemiQ GP2D003A060C	158 pF	10 µA	175 ░C	-55 C	No Recovery Time	600 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.65 V	TO-252-2L (DPAK)	SiC (Silicon Carbide) Schottky	0 ns																3 A
SemiQ GP2D040A120U		40 µA	175 ░C	-55 C	No Recovery Time	1.2 kV	Through Hole	TO-247-3	1.8 V	TO-247-3	SiC (Silicon Carbide) Schottky														1 Pair Common Cathode
SemiQ GP2T040A120U							Through Hole	TO-247-3		TO-247-3			4 V	63 A			-55 °C	175 ░C	1200 V		52 mOhm		3192 pF						-10 V	25 V	N-Channel	322 W	118 nC
SemiQ GSXD100A004S1-D3		1 mA	150 °C	-40 °C		45 V	Chassis Mount	SOT-227-4 miniBLOC		SOT-227	Schottky														2 Independent	100 A	200 mA 500 ns							700 mV
SemiQ GCMX020B120S1-E1							Chassis Mount	SOT-227-4 miniBLOC		SOT-227	SiC (Silicon Carbide Junction Transistor)		4 V	113 A	216 nC		-55 °C	175 ░C	1200 V		28 mOhm		5349 pF						-10 V	25 V	N-Channel				395 W
SemiQ GPA015A120MN-ND							Through Hole	SC-65-3 TO-3P-3		TO-3PN		320 ns					-55 °C	150 °C																		1.61 mJ 530 µJ	2.5 V	NPT and Trench	10 Ohm 15 A 15 V 600 V	210 nC	25 ns 166 ns	1200 V	45 A	30 A	212 W