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GP2T040A120U

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SIC MOSFET 1200V 40M TO-247-3L

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GP2T040A120U

Active
SemiQ

SIC MOSFET 1200V 40M TO-247-3L

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGP2T040A120U
Current - Continuous Drain (Id) @ 25°C63 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]118 nC
Input Capacitance (Ciss) (Max) @ Vds3192 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)322 W
Rds On (Max) @ Id, Vgs52 mOhm
Supplier Device PackageTO-247-3
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 18.92
10$ 16.67
100$ 14.86

Description

General part information

GP2T040A120U

N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-3

Documents

Technical documentation and resources