GPA015A120MN-ND

Obsolete

SemiQ

IGBT 1200V 30A 212W TO3PN

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Obsolete

SemiQ

IGBT 1200V 30A 212W TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	GPA015A120MN-ND

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	210 nC
IGBT Type	NPT and Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	212 W
Reverse Recovery Time (trr)	320 ns
Supplier Device Package	TO-3PN
Switching Energy	1.61 mJ, 530 µJ
Td (on/off) @ 25°C	166 ns, 25 ns
Test Condition	600 V, 15 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT and Trench 1200 V 30 A 212 W Through Hole TO-3PN

Technical documentation and resources