S
SemiQ
Standalone parts(26)
| Part | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Package / Case | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Technology | Reverse Recovery Time (trr) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power - Max | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Speed | Current - Average Rectified (Io) | Vgs (Max) [Min] | Vgs (Max) [Max] | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Power Dissipation (Max) [Max] | Switching Energy | Vce(on) (Max) @ Vge, Ic | IGBT Type | Test Condition | Gate Charge | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Pulsed (Icm) | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] |
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SemiQ | 1270 pF | 40 µA | 175 ░C | -55 C | No Recovery Time | 1.2 kV | Through Hole | TO-247-2 | 1.8 V | TO-247-2 | SiC (Silicon Carbide) Schottky | 0 ns | |||||||||||||||||||||||||||||||||
SemiQ | Chassis Mount | Module | Silicon Carbide (SiC) | 4 V | 214 A | 476 nC | 750 W | -40 C | 175 °C | 1200 V | 1.2 kV | 12 mOhm | 2 N-Channel (Half Bridge) | 13100 pF | |||||||||||||||||||||||||||||||
SemiQ | Chassis Mount | Module | Silicon Carbide (SiC) | 4 V | 102 A | 222 nC | 333 W | -40 C | 175 °C | 1200 V | 1.2 kV | 28 mOhm | 5600 pF | 4 N-Channel | |||||||||||||||||||||||||||||||
SemiQ | 25 µA | 175 ░C | -55 C | 1000 V | Chassis Mount | SOT-227-4 miniBLOC | 2.35 V | SOT-227 | Standard | 135 ns | 2 Independent | 120 A | 200 mA 500 ns | ||||||||||||||||||||||||||||||||
SemiQ | 158 pF | 10 µA | 175 ░C | -55 C | No Recovery Time | 600 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.65 V | TO-252-2L (DPAK) | SiC (Silicon Carbide) Schottky | 0 ns | 3 A | ||||||||||||||||||||||||||||||||
SemiQ | 40 µA | 175 ░C | -55 C | No Recovery Time | 1.2 kV | Through Hole | TO-247-3 | 1.8 V | TO-247-3 | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
SemiQ | Through Hole | TO-247-3 | TO-247-3 | 4 V | 63 A | -55 °C | 175 ░C | 1200 V | 52 mOhm | 3192 pF | -10 V | 25 V | N-Channel | 322 W | 118 nC | ||||||||||||||||||||||||||||||
SemiQ | 1 mA | 150 °C | -40 °C | 45 V | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | Schottky | 2 Independent | 100 A | 200 mA 500 ns | 700 mV | |||||||||||||||||||||||||||||||||
SemiQ | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | SiC (Silicon Carbide Junction Transistor) | 4 V | 113 A | 216 nC | -55 °C | 175 ░C | 1200 V | 28 mOhm | 5349 pF | -10 V | 25 V | N-Channel | 395 W | |||||||||||||||||||||||||||||
SemiQ | Through Hole | SC-65-3 TO-3P-3 | TO-3PN | 320 ns | -55 °C | 150 °C | 1.61 mJ 530 µJ | 2.5 V | NPT and Trench | 10 Ohm 15 A 15 V 600 V | 210 nC | 25 ns 166 ns | 1200 V | 45 A | 30 A | 212 W |