GP2D003A060C
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DIODE SIL CARB 600V 3A TO252-2L
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GP2D003A060C
ObsoleteSemiQ
DIODE SIL CARB 600V 3A TO252-2L
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GP2D003A060C |
|---|---|
| Capacitance @ Vr, F | 158 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-252-2L (DPAK) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
GP2D003A060C
Diode 600 V 3A Surface Mount TO-252-2L (DPAK)
Documents
Technical documentation and resources