GCMX010A120B2B1P
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SIC 1200V 10M MOSFET HALF-BRIDGE
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GCMX010A120B2B1P
ActiveSemiQ
SIC 1200V 10M MOSFET HALF-BRIDGE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX010A120B2B1P |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 214 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 476 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13100 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max | 750 W |
| Rds On (Max) @ Id, Vgs | 12 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 97.83 | |
| 10 | $ 89.31 | |||
Description
General part information
GCMX010A120B2B1P
Mosfet Array 1200V (1.2kV) 214A (Tc) 750W (Tc) Chassis Mount
Documents
Technical documentation and resources