GCMX020B120S1-E1
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SIC 1200V 20M MOSFET SOT-227
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GCMX020B120S1-E1
ActiveSemiQ
SIC 1200V 20M MOSFET SOT-227
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX020B120S1-E1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 113 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 216 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5349 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 395 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | SOT-227 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 41.72 | |
| 10 | $ 31.18 | |||
| 100 | $ 28.29 | |||
Description
General part information
GCMX020B120S1-E1
N-Channel 1200 V 113A (Tc) 395W (Tc) Chassis Mount SOT-227
Documents
Technical documentation and resources
No documents available