GCMX020A120B2H1P
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SIC 1200V 20M MOSFET FULL-BRIDGE
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GCMX020A120B2H1P
ActiveSemiQ
SIC 1200V 20M MOSFET FULL-BRIDGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX020A120B2H1P |
|---|---|
| Configuration | 4 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max | 333 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 99.48 | |
| 10 | $ 81.56 | |||
Description
General part information
GCMX020A120B2H1P
Mosfet Array 1200V (1.2kV) 102A (Tc) 333W (Tc) Chassis Mount
Documents
Technical documentation and resources
No documents available