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Rohm Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(9785)

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Part	Tolerance	Height - Seated (Max) [Max] [z]	Height - Seated (Max) [Max] [z]	Power (Watts)	Power (Watts)	Composition	Features	Resistance	Operating Temperature [Max]	Operating Temperature [Min]	Ratings	Temperature Coefficient	Package / Case	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [x]	Size / Dimension [y]	Number of Terminations	Height - Seated (Max) [Max]	Height - Seated (Max) [Max]	Supplier Device Package	Package / Case	Output	Reset	Number of Voltages Monitored	Voltage - Threshold	Type	Mounting Type	Package / Case	Current - Output	Frequency - Switching	Voltage - Output	Main Purpose	Outputs and Type	Outputs and Type	Utilized IC / Part	Voltage - Input [Max]	Voltage - Input [Min]	Board Type	Supplied Contents	Regulator Topology	Power (Watts)
Rohm Semiconductor ESR03EZPJ914	5 %	0.022 in	0.55 mm	0.25 W	250 mW	Thick Film	Automotive AEC-Q200 Pulse Withstanding	910 kOhms	155 °C	-55 °C	AEC-Q200	200 ppm/°C	0603 (1608 Metric)	0.8 mm	0.063 in	1.6 mm	0.031 in	2
Rohm Semiconductor ESR10EZPF4121	1 %			0.4 W	0.4 W	Thick Film	Automotive AEC-Q200 Pulse Withstanding	4.12 kOhms	155 °C	-55 °C	AEC-Q200	100 ppm/°C	0805	1.25 mm	0.079 in	2 mm	0.049 in	2	0.026 in	0.65 mm	0805
Rohm Semiconductor MCR25JZHFLR270	1 %			0.5 W	0.5 W	Thick Film	Automotive AEC-Q200	270 mOhms	155 °C	-55 °C	AEC-Q200	200 ppm/°C	1210	2.5 mm	0.126 in	3.2 mm	0.098 in	2	0.028 in	0.7 mm	1210	3225 Metric
Rohm Semiconductor ESR10EZPF4R32	1 %			0.5 W	0.5 W	Thick Film	Automotive AEC-Q200 Pulse Withstanding	4.32 Ohms	155 °C	-55 °C	AEC-Q200	100 ppm/°C	0805	1.25 mm	0.079 in	2 mm	0.049 in	2	0.026 in	0.65 mm	0805
Rohm Semiconductor ESR03EZPF2403	1 %	0.022 in	0.55 mm	0.25 W	250 mW	Thick Film	Automotive AEC-Q200 Pulse Withstanding	240 kOhms	155 °C	-55 °C	AEC-Q200	100 ppm/°C	0603 (1608 Metric)	0.8 mm	0.063 in	1.6 mm	0.031 in	2
Rohm Semiconductor BD4839FVE-TR									105 °C	-40 °C			SOT-665								5-VSOF		Open Drain or Open Collector	Active Low	1	3.9 V	Voltage Detector	Surface Mount
Rohm Semiconductor LTR100JZPJLR39	5 %				3 W	Thick Film	Automotive AEC-Q200 Current Sense	390 mOhms	155 °C	-55 °C	AEC-Q200	200 ppm/°C	Wide 2512 (6432 Metric)	6.4 mm	0.126 in	3.2 mm	0.252 in	2	0.028 in	0.7 mm	1225								1225
Rohm Semiconductor LTR10EZPJ562	5 %			0.25 W	250 mW	Thick Film	Automotive AEC-Q200 Pulse Withstanding	5.6 kOhms	155 °C	-55 °C	AEC-Q200	200 ppm/°C	0508 Wide 0805 (2012 Metric)	2 mm	0.047 in	1.2 mm	0.079 in	2	0.026 in	0.65 mm	0805
Rohm Semiconductor BD9F800MUX-EVK-001																														8 A	300 kHz	1 V	DC/DC Step Down	Non-Isolated	1	BD9F800	28 V	4.5 V	Fully Populated	Board(s)	Buck
Rohm Semiconductor KTR10EZPF2001	1 %			0.125 W		Thick Film	Automotive AEC-Q200 High Voltage	2 kOhms	155 °C	-55 °C	AEC-Q200	100 ppm/°C	0805	1.25 mm	0.079 in	2 mm	0.049 in	2	0.026 in	0.65 mm	0805																					0.125 W

Series	Category	# Parts	Status	Description

Rohm SemiconductorSCT4036KEHR1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	FETs, MOSFETs	1	1	AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The... Read More
Rohm SemiconductorSCT4036KR1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Single FETs, MOSFETs	2	1	SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that... Read More
Rohm SemiconductorSCT4036KRHR1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	1	AEC-Q101 qualified automotive grade product. SCT4036KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The... Read More
Rohm SemiconductorSCT4036KW71200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	1	SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application... Read More
Rohm SemiconductorSCT4045DEHR750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	1	AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The... Read More
Rohm SemiconductorSCT4045DR750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	FETs, MOSFETs	2	1	SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that... Read More
Rohm SemiconductorSCT4045DRHR750V, 34A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Discrete Semiconductor Products	1	1	AEC-Q101 qualified automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The... Read More
Rohm SemiconductorSCT4045DW7HR750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	1	AEC-Q101 qualified automotive grade product. SCT4045DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The... Read More
Rohm SemiconductorSCT4045DWA750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	1	SCT4045DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application... Read More
Rohm SemiconductorSCT4062KE1200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Single FETs, MOSFETs	2	1	SCT4062KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that... Read More