SCT4045DR Series

750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Catalog

750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Part	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type
Rohm Semiconductor SCT4045DEC11	750 V	Through Hole	34 A	63 nC	TO-247-3	59 mOhm	14600 pF	TO-247N	175 °C	18 V	115 W	4.8 V	-4 V	21 V	N-Channel
Rohm Semiconductor SCT4045DRC15	750 V	Through Hole	34 A	63 nC	TO-247-4	59 mOhm	1460 pF	TO-247-4L	175 °C	18 V	115 W	4.8 V	-4 V	21 V	N-Channel

Catalog

750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.