SCT4036KW7 Series

1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	FET Type	Power Dissipation (Max) [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]
Rohm Semiconductor SCT4036KW7TL	N-Channel	150 W	175 °C	47 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	TO-263-7L	Surface Mount	91 nC	18 V	40 A	2335 pF	4.8 V	1200 V	-4 V	21 V

Catalog

1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.