SCT4062KE Series

1200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Catalog

1200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor SCT4062KEC11	64 nC	TO-247N	4.8 V	175 °C	-4 V	21 V	N-Channel	81 mOhm	Through Hole	TO-247-3	1200 V	115 W	18 V	1498 pF	26 A
Rohm Semiconductor SCT4062KRC15	64 nC	TO-247-4L	4.8 V	175 °C	-4 V	21 V	N-Channel	81 mOhm	Through Hole	TO-247-4	1200 V	115 W	18 V	1498 pF	26 A

Catalog

1200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT4062KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.