SCT4036KRHR Series

1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Grade	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id
Rohm Semiconductor SCT4036KRHRC15	TO-247-4	N-Channel	47 mOhm	Through Hole	TO-247-4L	1200 V	175 °C	AEC-Q101	2335 pF	176 W	43 A	Automotive	18 V	91 nC	-4 V	21 V	4.8 V

Catalog

1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

AEC-Q101 qualified automotive grade product. SCT4036KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.