A
Analog Power Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
This manufacturer doesn't have any product series listed yet. Check back later or contact us if you're looking for specific parts.
| Part | Current - Reverse Leakage @ Vr | Technology | Current - Average Rectified (Io) | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Capacitance @ Vr, F | Speed | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Power Inc. | 10 µA | SiC (Silicon Carbide) Schottky | 54 A | Through Hole | 175 ░C | -55 C | TO-247-2 | 12 pF | No Recovery Time | 1.85 V | 1.2 kV | TO-247-2 | |||||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | SOIC-8 | SOIC-8 | 1 V | 20 V | -55 °C | 150 °C | 40 V | 7.7 A | 3.1 W | 1826 pF | 45 mOhm | 23 nC | P-Channel | 4.5 V 10 V | |||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | DFN3x3 | 1 V | 20 V | -55 °C | 150 °C | 60 V | 70 A | 63 W | 9.2 mOhm | 23 nC | N-Channel | 4.5 V 10 V | 1505 pF | ||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | TO-263 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1 V | 20 V | -55 °C | 175 ░C | 60 V | 90 A | 11678 pF | 4.5 mOhm | N-Channel | 6.5 V 10 V | 300 W | 167 nC | |||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | SOIC-8 | 1 V | 20 V | -55 °C | 150 °C | 30 V | 15 A | 3.1 W | 4441 pF | 13 mOhm | 56 nC | P-Channel | 4.5 V 10 V | ||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Through Hole | TO-220-3 Full Pack | 1 V | 20 V | -55 °C | 175 ░C | 100 V | 20 A | 60 W | 1184 pF | N-Channel | 6 V 10 V | 18 nC | 52 mOhm | ||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | TO-252-4 | DPAK (4 Leads + Tab) TO-252-5 TO-252AD | 1 V | -55 °C | 175 ░C | 60 V | 20 A 35 A | 1143 pF 1422 pF | 24 mOhm 85 mOhm | 9 nC | 50 W | 10 nC | N and P-Channel | ||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | SOT-23 | SC-59 SOT-23-3 TO-236-3 | 1 V | 20 V | -55 °C | 150 °C | 40 V | 5.2 A | 1.3 W | 4 nC | N-Channel | 4.5 V 10 V | |||||||||||||||||
Analog Power Inc. | MOSFET (Metal Oxide) | Surface Mount | SOT-23 | SC-59 SOT-23-3 TO-236-3 | 1 V | 20 V | -55 °C | 150 °C | 60 V | 600 mA | 1.3 W | 474 pF | 3 Ohm | 4 nC | N-Channel | 4.5 V 10 V | |||||||||||||||
Analog Power Inc. | 2 µA | SiC (Silicon Carbide) Schottky | 9 A | Through Hole | 175 ░C | -55 C | TO-247-3 | 6.3 pF | No Recovery Time | 1.8 V | 1.2 kV | TO-247-3 |