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2N7002P,235 - TO-236AB

2N7002P,235

Freescale Semiconductor - NXP

MOSFET N-CH 60V 360MA TO236AB

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2N7002P,235 - TO-236AB

2N7002P,235

Freescale Semiconductor - NXP

MOSFET N-CH 60V 360MA TO236AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N7002P,235
Current - Continuous Drain (Id) @ 25°C360 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.24
10$ 0.16
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
Digi-Reel® 1$ 0.24
10$ 0.16
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
Tape & Reel (TR) 10000$ 0.02

Description

General part information

2N7002NXBK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources