2N7002F,215

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 60V 475MA TO236AB

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

2N7002F,215

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 60V 475MA TO236AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002F,215

Current - Continuous Drain (Id) @ 25°C	475 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.69 nC
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	2.5 V

2N7002NXBK Series

60 V, N-channel Trench MOSFET

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	FET Feature	Configuration	Operating Temperature	Power - Max [Max]	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP 2N7002NXAKR	2.1 V	N-Channel	10 V	5 V	TO-236AB	-55 °C	150 °C	0.43 nC	Surface Mount	20 pF	300 mA	190 mA	1.33 W 265 mW	60 V	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	4.5 Ohm
Freescale Semiconductor - NXP 2N7002PS,115	2.4 V				6-TSSOP			0.8 nC	Surface Mount	50 pF		320 mA		60 V		MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1.6 Ohm	AEC-Q100	Logic Level Gate	2 N-Channel (Dual)	150 °C	420 mW	Automotive
Freescale Semiconductor - NXP 2N7002F,215	2.5 V	N-Channel			TO-236AB	-55 °C	150 °C	0.69 nC	Surface Mount	50 pF		475 mA		60 V	30 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	2 Ohm							4.5 V 10 V	830 mW
Freescale Semiconductor - NXP 2N7002NXBKR	2.1 V	N-Channel	10 V	5 V	TO-236AB	-55 °C	150 °C	1 nC	Surface Mount	23.6 pF		270 mA 330 mA	1.67 W 310 mW	60 V	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	2.8 Ohm
Freescale Semiconductor - NXP 2N7002HR	2.5 V	N-Channel			TO-236AB	-65 °C	150 °C		Surface Mount	50 pF		300 mA		60 V	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	5 Ohm	AEC-Q101					Automotive	4.5 V 10 V	830 mW
Freescale Semiconductor - NXP 2N7002BKV,115	2.1 V				SOT-666			0.6 nC	Surface Mount	50 pF		340 mA		60 V		MOSFET (Metal Oxide)	SOT-563 SOT-666	1.6 Ohm	AEC-Q101	Logic Level Gate	2 N-Channel (Dual)	150 °C	350 mW	Automotive
Freescale Semiconductor - NXP 2N7002BK,215	2.1 V	N-Channel			TO-236AB			0.6 nC	Surface Mount	50 pF		350 mA		60 V	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	1.6 Ohm	AEC-Q101			150 °C		Automotive	10 V
Freescale Semiconductor - NXP 2N7002BKS/ZLX	2.1 V				6-TSSOP			0.6 nC	Surface Mount	50 pF		300 mA		60 V		MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1.6 Ohm		Logic Level Gate	2 N-Channel (Dual)	150 °C	1.04 W
Freescale Semiconductor - NXP 2N7002HWX	2.4 V	N-Channel			SOT-323	-55 °C	150 °C		Surface Mount	34 pF		310 mA	310 mW	60 V	20 V	MOSFET (Metal Oxide)	SC-70 SOT-323	1.6 Ohm	AEC-Q101					Automotive	4.5 V 10 V		0.5 nC
Freescale Semiconductor - NXP 2N7002P,235	2.4 V	N-Channel			TO-236AB	-55 °C	150 °C		Surface Mount	50 pF		360 mA		60 V	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	1.6 Ohm	AEC-Q101					Automotive	10 V	350 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N7002NXBK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources