Zenode.ai Logo
Beta
K
2N7002NXAKR - TO-236AB

2N7002NXAKR

Active
Freescale Semiconductor - NXP

MOSFET N-CH 60V 190MA TO236AB

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
2N7002NXAKR - TO-236AB

2N7002NXAKR

Active
Freescale Semiconductor - NXP

MOSFET N-CH 60V 190MA TO236AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N7002NXAKR
Current - Continuous Drain (Id) @ 25°C300 mA
Current - Continuous Drain (Id) @ 25°C190 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.43 nC
Input Capacitance (Ciss) (Max) @ Vds20 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.33 W, 265 mW
Rds On (Max) @ Id, Vgs4.5 Ohm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.15
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.03
Digi-Reel® 1$ 0.15
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.03
Tape & Reel (TR) 3000$ 0.03
6000$ 0.02
9000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.01

Description

General part information

2N7002NXBK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources