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2N7002NXBKR - TO-236AB

2N7002NXBKR

Active
Freescale Semiconductor - NXP

TRANSISTOR MOSFET N-CH 60V 0.33A 3-PIN SOT-23 T/R

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2N7002NXBKR - TO-236AB

2N7002NXBKR

Active
Freescale Semiconductor - NXP

TRANSISTOR MOSFET N-CH 60V 0.33A 3-PIN SOT-23 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N7002NXBKR
Current - Continuous Drain (Id) @ 25°C330 mA, 270 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC
Input Capacitance (Ciss) (Max) @ Vds23.6 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.67 W, 310 mW
Rds On (Max) @ Id, Vgs2.8 Ohm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.13
100$ 0.07
500$ 0.06
1000$ 0.04
Digi-Reel® 1$ 0.19
10$ 0.13
100$ 0.07
500$ 0.06
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
30000$ 0.02
75000$ 0.02
150000$ 0.02

Description

General part information

2N7002NXBK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.