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2N7002BKV,115 - SOT666

2N7002BKV,115

Freescale Semiconductor - NXP

2N7002BKV - 60 V, 340 MA DUAL N-CHANNEL TRENCH MOSFET@EN-US SOT 6-PIN

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2N7002BKV,115 - SOT666

2N7002BKV,115

Freescale Semiconductor - NXP

2N7002BKV - 60 V, 340 MA DUAL N-CHANNEL TRENCH MOSFET@EN-US SOT 6-PIN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N7002BKV,115
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C340 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]350 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageSOT-666
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
2000$ 0.09
Digi-Reel® 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 4000$ 0.09
8000$ 0.09
12000$ 0.08
28000$ 0.08
100000$ 0.07

Description

General part information

2N7002NXBK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources