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Transphorm
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
TransphormTDADP-USBC | Development Boards, Kits, Programmers | 1 | 8 | |
TransphormTDTTP2500 | Development Boards, Kits, Programmers | 1 | 1 | |
TransphormTP65H035 | FETs, MOSFETs | 1 | 1 | |
TransphormTP65H050 | Discrete Semiconductor Products | 2 | 1 | |
TransphormTP65H150 | FETs, MOSFETs | 1 | 1 | |
TransphormTP65H300 | FETs, MOSFETs | 1 | 1 | |
TransphormTP65H480 | Discrete Semiconductor Products | 1 | 1 | |
TransphormTP90H050 | FETs, MOSFETs | 1 | 8 | |
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Outputs and Type | Outputs and Type | Power - Output | Voltage - Input [Min] | Voltage - Input [Max] | Board Type | Utilized IC / Part | Supplied Contents | Main Purpose | Voltage - Output | Frequency - Switching |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transphorm | 638 pF | GaNFET (Gallium Nitride) | 20 V | N-Channel | 10 V | 29 A | 16-PowerSOP Module | 85 mOhm | TOLT | 4.8 V | -55 °C | 150 °C | Surface Mount | 9 nC | 96 W | 650 V | ||||||||||||||||
Transphorm | 400 pF | GaNFET (Gallium Nitride) | 10 V | N-Channel | 6 V | 16 A | 8-PowerTDFN | 180 mOhm | 8-PQFN (5x6) | -55 °C | 150 °C | Surface Mount | 83 W | 650 V | 2.8 V | 4.9 nC | ||||||||||||||||
Transphorm | 760 pF | GaNFET (Gallium Nitride) | 18 V | N-Channel | 10 V | 9 A | 4-PowerDFN | 4-PQFN (8x8) | 2.5 V | -55 °C | 175 ░C | Surface Mount | 65 W | 600 V | 9.3 nC | 350 mOhm | ||||||||||||||||
Transphorm | 400 pF | GaNFET (Gallium Nitride) | 10 V | N-Channel | 6 V | 9.2 A | 8-PowerTDFN | 312 mOhm | 8-PQFN (5x6) | -55 °C | 150 °C | Surface Mount | 3.5 nC | 650 V | 2.8 V | 41.6 W | ||||||||||||||||
Transphorm | 760 pF | GaNFET (Gallium Nitride) | 18 V | N-Channel | 8 V | 17 A | 3-PowerDFN | 180 mOhm | 3-PQFN (8x8) | 2.6 V | -55 °C | 175 ░C | Surface Mount | 96 W | 600 V | 9.3 nC | ||||||||||||||||
Transphorm | GaNFET (Gallium Nitride) | 20 V | N-Channel | 10 V | 18.9 A | TO-220-3 | 110 mOhm | TO-220AB | -55 °C | 150 °C | Through Hole | 14.4 nC | 65.8 W | 650 V | 4.1 V | 818 pF | ||||||||||||||||
Transphorm | Non-Isolated | 1 | 4 kW | 85 VAC | 265 VAC | Fully Populated | TP65H035WS | Board(s) | AC/DC PFC Primary Side | 387 V | 66 kHz | |||||||||||||||||||||
Transphorm | 760 pF | GaNFET (Gallium Nitride) | 18 V | N-Channel | 10 V | 17 A | 3-PowerDFN | 180 mOhm | 3-PQFN (8x8) | 2.6 V | -55 °C | 175 ░C | Surface Mount | 96 W | 600 V | 9.3 nC | ||||||||||||||||
Transphorm | 720 pF | GaNFET (Gallium Nitride) | 18 V | N-Channel | 8 V | 16 A | 3-PowerDFN | 3-PQFN (8x8) | 2.6 V | -55 °C | 150 °C | Surface Mount | 6.2 nC | 81 W | 650 V | 180 mOhm | ||||||||||||||||
Transphorm | 414 pF | GaNFET (Gallium Nitride) | 10 V | N-Channel | 6 V | 3.6 A | 8-PowerTDFN | 8-PQFN (5x6) | -55 °C | 150 °C | Surface Mount | 5 nC | 650 V | 2.8 V | 560 mOhm | 13.2 W |