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Transphorm

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Series	Category	# Parts	Status	Description

TransphormTDADP-USBC	Development Boards, Kits, Programmers	1	8
TransphormTDTTP2500	Development Boards, Kits, Programmers	1	1
TransphormTP65H035	FETs, MOSFETs	1	1
TransphormTP65H050	Discrete Semiconductor Products	2	1
TransphormTP65H150	FETs, MOSFETs	1	1
TransphormTP65H300	FETs, MOSFETs	1	1
TransphormTP65H480	Discrete Semiconductor Products	1	1
TransphormTP90H050	FETs, MOSFETs	1	8

Standalone parts(22)

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Outputs and Type	Outputs and Type	Power - Output	Voltage - Input [Min]	Voltage - Input [Max]	Board Type	Utilized IC / Part	Supplied Contents	Main Purpose	Voltage - Output	Frequency - Switching
Transphorm TP65H070G4RS-TR	638 pF	GaNFET (Gallium Nitride)	20 V	N-Channel	10 V	29 A	16-PowerSOP Module	85 mOhm	TOLT	4.8 V	-55 °C	150 °C	Surface Mount	9 nC	96 W	650 V
Transphorm TP65H150BG4JSG-TR	400 pF	GaNFET (Gallium Nitride)	10 V	N-Channel	6 V	16 A	8-PowerTDFN	180 mOhm	8-PQFN (5x6)		-55 °C	150 °C	Surface Mount		83 W	650 V	2.8 V	4.9 nC
Transphorm TPH3202LD	760 pF	GaNFET (Gallium Nitride)	18 V	N-Channel	10 V	9 A	4-PowerDFN		4-PQFN (8x8)	2.5 V	-55 °C	175 ░C	Surface Mount		65 W	600 V		9.3 nC	350 mOhm
Transphorm TP65H300G4JSGB-TR	400 pF	GaNFET (Gallium Nitride)	10 V	N-Channel	6 V	9.2 A	8-PowerTDFN	312 mOhm	8-PQFN (5x6)		-55 °C	150 °C	Surface Mount	3.5 nC		650 V	2.8 V			41.6 W
Transphorm TPH3206LDG-TR	760 pF	GaNFET (Gallium Nitride)	18 V	N-Channel	8 V	17 A	3-PowerDFN	180 mOhm	3-PQFN (8x8)	2.6 V	-55 °C	175 ░C	Surface Mount		96 W	600 V		9.3 nC
Transphorm TP65H100G4PS		GaNFET (Gallium Nitride)	20 V	N-Channel	10 V	18.9 A	TO-220-3	110 mOhm	TO-220AB		-55 °C	150 °C	Through Hole	14.4 nC	65.8 W	650 V	4.1 V				818 pF
Transphorm TDTTP4000W066C-KIT																						Non-Isolated	1	4 kW	85 VAC	265 VAC	Fully Populated	TP65H035WS	Board(s)	AC/DC PFC Primary Side	387 V	66 kHz
Transphorm TPH3206LS	760 pF	GaNFET (Gallium Nitride)	18 V	N-Channel	10 V	17 A	3-PowerDFN	180 mOhm	3-PQFN (8x8)	2.6 V	-55 °C	175 ░C	Surface Mount		96 W	600 V		9.3 nC
Transphorm TPH3206LSGB	720 pF	GaNFET (Gallium Nitride)	18 V	N-Channel	8 V	16 A	3-PowerDFN		3-PQFN (8x8)	2.6 V	-55 °C	150 °C	Surface Mount	6.2 nC	81 W	650 V			180 mOhm
Transphorm TP65H480G4JSGB-TR	414 pF	GaNFET (Gallium Nitride)	10 V	N-Channel	6 V	3.6 A	8-PowerTDFN		8-PQFN (5x6)		-55 °C	150 °C	Surface Mount	5 nC		650 V	2.8 V		560 mOhm	13.2 W