TPH3206LSGB
ObsoleteTransphorm
GANFET N-CH 650V 16A 3PQFN
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
TPH3206LSGB
ObsoleteTransphorm
GANFET N-CH 650V 16A 3PQFN
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH3206LSGB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-PowerDFN |
| Power Dissipation (Max) | 81 W |
| Rds On (Max) @ Id, Vgs [Max] | 180 mOhm |
| Supplier Device Package | 3-PQFN (8x8) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 18 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
TPH3206LSGB
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount 3-PQFN (8x8)
Documents
Technical documentation and resources