TP65H100G4PS
ActiveTransphorm
HI VOLT FETS
Deep-Dive with AI
Search across all available documentation for this part.
TP65H100G4PS
ActiveTransphorm
HI VOLT FETS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TP65H100G4PS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.9 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 818 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 65.8 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.44 | |
| 10 | $ 5.52 | |||
| 450 | $ 4.06 | |||
| 1350 | $ 3.65 | |||
| 2250 | $ 3.42 | |||
Description
General part information
TP65H100G4PS
N-Channel 650 V 18.9A (Tc) 65.8W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources
No documents available