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TP65H070G4RS-TR - TP65H070G4RS-TR

TP65H070G4RS-TR

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650 V 29 A GAN FET

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TP65H070G4RS-TR - TP65H070G4RS-TR

TP65H070G4RS-TR

Active
Transphorm

650 V 29 A GAN FET

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTP65H070G4RS-TR
Current - Continuous Drain (Id) @ 25°C29 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9 nC
Input Capacitance (Ciss) (Max) @ Vds638 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case16-PowerSOP Module
Power Dissipation (Max)96 W
Rds On (Max) @ Id, Vgs85 mOhm
Supplier Device PackageTOLT
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.85
10$ 7.58
100$ 6.32
500$ 5.58
1000$ 5.02
Digi-Reel® 1$ 8.85
10$ 7.58
100$ 6.32
500$ 5.58
1000$ 5.02
Tape & Reel (TR) 2000$ 4.70

Description

General part information

TP65H070G4RS-TR

N-Channel 650 V 29A (Tc) 96W (Tc) Surface Mount TOLT

Documents

Technical documentation and resources