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ON Semiconductor
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Transient Voltage Suppressors (TVS) | 1 | 1 | The uESD Series is designed to protect voltage sensitive componentsfrom ESD and transient voltage events. Excellent clamping capability,low leakage, and fast response time, make these parts ideal for ESDprotection on designs where board space is at a premium. Because of itssmall size, it is suited for use in cellular phones,... Read More | |
ON SemiconductorUF3SC065030 | Discrete Semiconductor Products | 1 | 8 | |
| Single Diodes | 6 | 1 | 1.0A Ultra Fast Recovery Rectifier | |
ON SemiconductorUJ3D1210KSSilicon Carbide (SiC) Diode - EliteSiC, TO-247-3L, 10A, 1200V SiC Merged PiN-Schottky (MPS) Diode | Diodes | 1 | 1 | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating... Read More |
| Power Distribution Switches, Load Drivers | 1 | 1 | The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit... Read More | |
| Bipolar Transistor Arrays, Pre-Biased | 2 | 1 | The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates... Read More | |
| Transistors | 3 | 1 | The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates... Read More | |
| Bipolar (BJT) | 1 | 8 | The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications. | |
| Single Diodes | 1 | 4 | Super Fast Surface Mount Rectifiers | |
| Diodes | 1 | 1 | Super Fast Surface Mount Rectifiers | |
| Part | Output Type | Input Type | Voltage - Load | Grade | Voltage - Supply (Vcc/Vdd) | Package / Case | Interface | Features | Number of Outputs | Rds On (Typ) | Ratio - Input:Output [custom] | Mounting Type | Fault Protection | Current - Output (Max) [Max] | Switch Type | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Output Configuration | Number of Inputs | Package / Case [y] | Package / Case [x] | Current - Output High, Low | Max Propagation Delay @ V, Max CL | Input Logic Level - High [Min] | Input Logic Level - High [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Input Logic Level - Low [Max] | Input Logic Level - Low [Min] | Number of Circuits | Logic Type | Power - Max [Max] | Test Condition | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) | Gate Charge | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) [Max] | Voltage - Output [Min] | Voltage - Output [Max] | Applications | Voltage - Input [Min] | Voltage - Input [Max] | Package / Case [custom] | Package / Case [custom] | Type | Data Rate | Number of Drivers/Receivers [custom] | Number of Drivers/Receivers [custom] | Protocol | Number of Bits per Element | Number of Elements | Zero Crossing Circuit | Current - LED Trigger (Ift) (Max) [Max] | Number of Channels | Voltage - Off State | Current - Hold (Ih) | Static dV/dt (Min) [Min] | Turn On Time | Current - DC Forward (If) (Max) [Max] | Voltage - Forward (Vf) (Typ) | Package / Case | Package / Case | Current - On State (It (RMS)) (Max) | Approval Agency | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | FET Feature | Rds On (Max) @ Id, Vgs | Configuration |
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ON Semiconductor | N-Channel | Non-Inverting | 42 V | Automotive | 6-VDFN Exposed Pad | On/Off | Auto Restart | 1 | 165 mOhm | 1:1 | Surface Mount | Current Limiting (Fixed) Over Temperature Over Voltage | 2 A | General Purpose | 3.3 | 3 | 6-DFN | 150 °C | -40 °C | AEC-Q100 | Low Side | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | 14-DIP | Through Hole | 14-DIP | 85 °C | -40 °C | 2 | 7.62 mm | 0.3 " | 24 mA | 7.5 ns | 2.1 V | 3.85 V | 2 V | 6 V | 1.65 V | 0.9 V | 4 | OR Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | Logic | Automotive | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | TO-262 (I2PAK) | 175 °C | -40 C | AEC-Q101 | 187 W | 5 V 300 V 1000 Ohm | -/5.4µs | 360 V | 20 nC | 1.4 V | 44 A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | 16-TSSOP Exposed Pad | 1 | Surface Mount | 16-TSSOP-EP | 125 °C | 0 °C | 1.1 V | 1.8 V | Controller DDR | 2.3 V | 3.6 V | 0.173 " | 4.4 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | 8-SOIC | Surface Mount | 8-SOIC | 85 °C | -40 °C | 3.9 mm | 0.154 in | 3 V | 3.6 V | Driver | 600 Mbps | 0 | 2 | LVDS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | 28-LCC (J-Lead) | Surface Mount | 11.43 | 11.43 | 28-PLCC | 70 °C | 0 °C | 4.75 V | 5.25 V | Shift Register | 16 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ON Semiconductor | Triac | 6-DIP | Through Hole | 6-DIP | 100 °C | -55 °C | 1.3 mA | 1 | 800 V | 500 µA | 10 kV/µs | 60 µs | 30 mA | 1.28 V | 0.3 in | 7.62 mm | 300 mA | UL VDE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor | Automotive | 8-PowerTDFN | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 175 ░C | -55 °C | AEC-Q101 | 3.1 W | MOSFET (Metal Oxide) | 60 V | 668 pF | 6.4 A | 2.5 V | Logic Level Gate | 36 mOhm | 2 N-Channel (Dual) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ON Semiconductor |