NVMFD5483NLT1G
ObsoleteON Semiconductor
DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
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NVMFD5483NLT1G
ObsoleteON Semiconductor
DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFD5483NLT1G |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6.4 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 668 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max [Max] | 3.1 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 36 mOhm |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVMFD5483NLT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources
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