SICFET N-CH 650V 18A 4DFN
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | FET Type | Vgs(th) (Max) @ Id [Max] | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 42 mOhm | 4-DFN (8x8) | 43 nC | 12 V 12 V | 179 W | 18 A | Surface Mount | 25 V | 1500 pF | 4-PowerTSFN | N-Channel | 6 V | SiCFET (Cascode SiCJFET) | 650 V | -55 °C | 150 °C |