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Diodes Inc
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Part | Frequency - Switching | Topology | Package / Case | Package / Case [custom] | Package / Case | Mounting Type | Output Phases | Clock Sync | Operating Temperature [Max] | Operating Temperature [Min] | Output Type | Voltage - Supply (Vcc/Vdd) [Min] | Voltage - Supply (Vcc/Vdd) [Max] | Synchronous Rectifier | Number of Outputs | Function | Supplier Device Package | Output Configuration | Speed | Voltage - Forward (Vf) (Max) @ If [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Current - Average Rectified (Io) | Capacitance @ Vr, F | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Grade | Transistor Type | Qualification | Type | Frequency | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Height - Seated (Max) [Max] [z] | Height - Seated (Max) [Max] [z] | Frequency Stability | ESR (Equivalent Series Resistance) | Frequency Tolerance | Load Capacitance | Operating Mode | Voltage - Supply | Base Resonator | Output | Current - Supply (Disable) (Max) [Max] | Current - Supply (Max) [Max] | Reverse Recovery Time (trr) | Speed | Voltage - Forward (Vf) (Max) @ If | Battery Chemistry | Fault Protection | Number of Cells | Number of Circuits | Charge Injection | Switch Circuit | Current - Leakage (IS(off)) (Max) [Max] | Channel-to-Channel Matching (ΔRon) | On-State Resistance (Max) [Max] | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) [Min] | Voltage - Supply, Single (V+) [Max] | Channel Capacitance (CS(off), CD(off)) [custom] | Channel Capacitance (CS(off), CD(off)) [custom] | Crosstalk | Switch Time (Ton, Toff) (Max) [custom] | Switch Time (Ton, Toff) (Max) [custom] | -3db Bandwidth |
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Diodes Inc | 200 kHz | Boost | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | Surface Mount | 1 | 70 °C | 0 °C | Transistor Driver | 0.98 V | 3.5 V | 1 | Step-Up | 8-MSOP | Positive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | TO-220-2 | Through Hole | TO-220AC | 200 mA 500 ns | 840 mV | 150 °C | -65 C | 100 µA | 45 V | Schottky | 10 A | 400 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 150 °C | -65 °C | SOT-23-3 | 600 mV | 300 MHz | 420 | 310 mW | 45 V | 100 mA | 15 nA | Automotive | NPN | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 4-SMD No Lead | Surface Mount | 100 °C | -20 C | MHz Crystal | 25 MHz | 3.2 mm | 2.5 mm | 0.126 in | 0.098 in | 0.031 " | 0.78 mm | 20 ppm | 50 Ohms | 15 ppm | 18 pF | Fundamental | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 4-SMD No Lead | Surface Mount | 85 °C | -40 °C | Enable/Disable | XO (Standard) | 133 MHz | 5 mm | 3.2 mm | 0.197 in | 0.126 " | 0.051 in | 1.3 mm | 50 ppm | 3.3 V | Crystal | CMOS | 10 ÁA | 45 mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | Axial DO-204AL DO-41 | Through Hole | DO-41 | 200 mA | 175 ░C | -65 C | 5 µA | 100 V | Standard | 1 A | 8 pF | 2 µs | Standard Recovery >500ns | 1 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Diodes Inc | SC-74A SOT-753 | Surface Mount | 85 °C | -40 °C | Battery Protection | SOT-25 | Lithium Ion/Polymer | Over Current Over Voltage | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | SOD-123F | Surface Mount | SOD-123F | 200 mA 500 ns | 150 °C | -55 °C | 5 µA | 1000 V | Standard | 1 A | 500 ns | 1.3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | Surface Mount | 125 °C | -40 °C | SOT-363 | 1 | 7 pC | SPDT | 1 µA | 250 mOhm | 10 Ohms | 2:1 | 1.65 V | 5.5 V | 6 pF | 6 pF | -42 dB | 4 ns | 7.5 ns | 300 MHz |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Gate Drivers | 1 | 1 | This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1.5A into the low gate impedance with just 10mA input from a controller. The turn-on and turn-off switching behavior of the MOSFET can be individually tailored... Read More | |
| Integrated Circuits (ICs) | 1 | 1 | The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to ~1ns and rise/fall times down to 14ns this device ensures rapid switching of... Read More | |
| Gate Drivers | 1 | 1 | The ZXGD3005E6 is a high-speed non-inverting single gate driver capable of driving up to 10A into a MOSFET or IGBT gate capacitive load from supply voltages up to 25V. With propagation delay times down to <10ns and correspondingly rise/fall times of <20ns. This gate driver ensures rapid switching of the... Read More | |
| Integrated Circuits (ICs) | 1 | 1 | The ZXGD3006E6Q is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load. | |
| Power Management (PMIC) | 2 | 1 | 40V, 1A, Gate Driver, SOT363 | |
Diodes IncZXGD3101N8 | Gate Drivers | 1 | 1 | The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. TheseAC-DC convertersare comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET's Gate... Read More |
Diodes IncZXGD3102T8 | Power Management (PMIC) | 1 | 8 | |
| Gate Drivers | 1 | 1 | The ZXGD3103 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s... Read More | |
| Integrated Circuits (ICs) | 1 | 1 | The ZXGD3104 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s... Read More | |
| Gate Drivers | 1 | 1 | ZXGD3105N8 synchronous controller is designed for driving a MOSFET as an ideal rectifier. This is to replace a diode for increasing the power transfer efficiency. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that... Read More | |