ZXMP6A17DN8TA

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 2.3A I(D), 60V, 0.125OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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ZXMP6A17DN8TA

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 2.3A I(D), 60V, 0.125OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP6A17DN8TA

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	17.7 nC
Input Capacitance (Ciss) (Max) @ Vds	637 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

ZXMP6A17E6Q Series

Dual P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Package / Case	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]	FET Feature	Configuration
Diodes Inc ZXMP6A17E6QTA	60 V	637 pF	Surface Mount	3 V	-55 °C	150 °C	20 V	SOT-26	Automotive	P-Channel	2.3 A	17.7 nC	MOSFET (Metal Oxide)	1.1 W	125 mOhm	4.5 V 10 V	AEC-Q101	SOT-23-6
Diodes Inc ZXMP6A17KTC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	TO-252-3		P-Channel	4.4 A	17.7 nC	MOSFET (Metal Oxide)	2.11 W	125 mOhm	4.5 V 10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3
Diodes Inc ZXMP6A17GTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17GQTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17N8TC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	8-SO		P-Channel	2.7 A	17.7 nC	MOSFET (Metal Oxide)	1.56 W	125 mOhm	4.5 V 10 V		8-SOIC		3.9 mm	0.154 in
Diodes Inc ZXMP6A17DN8TA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C		8-SO			2.7 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm			8-SOIC		3.9 mm	0.154 in	Logic Level Gate	2 P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.62
		10	$ 1.03
		100	$ 0.69
	Digi-Reel®	1	$ 1.62
		10	$ 1.03
		100	$ 0.69
	Tape & Reel (TR)	500	$ 0.54
		1000	$ 0.49
		1500	$ 0.47
		2500	$ 0.44
		3500	$ 0.43
		5000	$ 0.41
		12500	$ 0.41

Description

General part information

ZXMP6A17E6Q Series

This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

ZXMP6A17DN8TA

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ZXMP6A17DN8TA

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Technical Specifications

ZXMP6A17E6Q Series

Pricing

Description

ZXMP6A17E6Q Series

Documents

Datasheet

Recommended Soldering Techniques

Package PDF

Datasheet

ZXMP6A17E6Q Series