ZXMP6A17E6Q Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Package / Case	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]	FET Feature	Configuration
Diodes Inc ZXMP6A17E6QTA	60 V	637 pF	Surface Mount	3 V	-55 °C	150 °C	20 V	SOT-26	Automotive	P-Channel	2.3 A	17.7 nC	MOSFET (Metal Oxide)	1.1 W	125 mOhm	4.5 V 10 V	AEC-Q101	SOT-23-6
Diodes Inc ZXMP6A17KTC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	TO-252-3		P-Channel	4.4 A	17.7 nC	MOSFET (Metal Oxide)	2.11 W	125 mOhm	4.5 V 10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3
Diodes Inc ZXMP6A17GTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17GQTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17N8TC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	8-SO		P-Channel	2.7 A	17.7 nC	MOSFET (Metal Oxide)	1.56 W	125 mOhm	4.5 V 10 V		8-SOIC		3.9 mm	0.154 in
Diodes Inc ZXMP6A17DN8TA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C		8-SO			2.7 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm			8-SOIC		3.9 mm	0.154 in	Logic Level Gate	2 P-Channel

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Fast Switching Speed

• Low Gate Drive

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The ZXMP6A17GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.