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ZXMP6A17E6QTA - Package Image for SOT26

ZXMP6A17E6QTA

Active
Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -60V; -3A; IDM: -13.6A; 1.92W; SOT26

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ZXMP6A17E6QTA - Package Image for SOT26

ZXMP6A17E6QTA

Active
Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -60V; -3A; IDM: -13.6A; 1.92W; SOT26

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMP6A17E6QTA
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds637 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-6
Power Dissipation (Max)1.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageSOT-26
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.11
10$ 0.70
100$ 0.46
500$ 0.35
1000$ 0.32
Digi-Reel® 1$ 1.11
10$ 0.70
100$ 0.46
500$ 0.35
1000$ 0.32
Tape & Reel (TR) 3000$ 0.28
6000$ 0.26
9000$ 0.25
15000$ 0.24
NewarkEach (Supplied on Cut Tape) 1$ 1.30
10$ 0.88
25$ 0.80
50$ 0.71
100$ 0.63
250$ 0.58
500$ 0.53
1000$ 0.49
TMEN/A 1$ 1.31
10$ 0.95
100$ 0.70
500$ 0.53

Description

General part information

ZXMP6A17E6Q Series

This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.