ZXMP6A17GQTA

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 0.125OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-4

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ZXMP6A17GQTA

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 0.125OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-4

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP6A17GQTA

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.7 nC
Input Capacitance (Ciss) (Max) @ Vds	637 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

ZXMP6A17E6Q Series

Dual P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Package / Case	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]	FET Feature	Configuration
Diodes Inc ZXMP6A17E6QTA	60 V	637 pF	Surface Mount	3 V	-55 °C	150 °C	20 V	SOT-26	Automotive	P-Channel	2.3 A	17.7 nC	MOSFET (Metal Oxide)	1.1 W	125 mOhm	4.5 V 10 V	AEC-Q101	SOT-23-6
Diodes Inc ZXMP6A17KTC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	TO-252-3		P-Channel	4.4 A	17.7 nC	MOSFET (Metal Oxide)	2.11 W	125 mOhm	4.5 V 10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3
Diodes Inc ZXMP6A17GTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17GQTA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	SOT-223-3		P-Channel	3 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm	4.5 V 10 V		TO-261-4 TO-261AA	2 W
Diodes Inc ZXMP6A17N8TC	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C	20 V	8-SO		P-Channel	2.7 A	17.7 nC	MOSFET (Metal Oxide)	1.56 W	125 mOhm	4.5 V 10 V		8-SOIC		3.9 mm	0.154 in
Diodes Inc ZXMP6A17DN8TA	60 V	637 pF	Surface Mount	1 V	-55 °C	150 °C		8-SO			2.7 A	17.7 nC	MOSFET (Metal Oxide)		125 mOhm			8-SOIC		3.9 mm	0.154 in	Logic Level Gate	2 P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.79
		10	$ 0.69
		100	$ 0.48
		500	$ 0.40
	Digi-Reel®	1	$ 0.79
		10	$ 0.69
		100	$ 0.48
		500	$ 0.40
	Tape & Reel (TR)	1000	$ 0.34
		2000	$ 0.30
		5000	$ 0.29
		10000	$ 0.27
Newark	Each (Supplied on Cut Tape)	1	$ 1.03
		10	$ 0.76
		25	$ 0.70
		50	$ 0.64
		100	$ 0.58
		250	$ 0.54
		500	$ 0.49
		1000	$ 0.48

Description

General part information

ZXMP6A17E6Q Series

This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document