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YAGEO XSEMI
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
YAGEO XSEMIXP3N | Single FETs, MOSFETs | 1 | 1 | |
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
YAGEO XSEMI | -55 °C | 175 ░C | 5 V | 424 nC | 1.2 mOhm | 25120 pF | N-Channel | Toll | Surface Mount | 20 V | 10 V | MOSFET (Metal Oxide) | 80 V | 3.75 W 333 W | 300 A | 8-PowerSFN | |||
YAGEO XSEMI | -55 °C | 150 °C | 3 V | 64 nC | 13.5 mOhm | 3360 pF | P-Channel | PMPAK® 3 x 3 | Surface Mount | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 30 V | 3.13 W | 12.7 A | 8-PowerDFN | |||
YAGEO XSEMI | -55 °C | 150 °C | 2.3 V | 40 nC | 3.1 mOhm | 2048 pF | N-Channel | PMPAK® 5 x 6 | Surface Mount | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 30 V | 5 W 31.2 W | 31.5 A 78 A | 8-PowerLDFN | |||
YAGEO XSEMI | -55 °C | 150 °C | 4 V | 112 nC | 3 mOhm | 6520 pF | N-Channel | TO-252 | Surface Mount | 20 V | 10 V | MOSFET (Metal Oxide) | 60 V | 2 W 83.3 W | 75 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | |||
YAGEO XSEMI | -55 °C | 150 °C | 3 V | 9.5 mOhm | 1280 pF | N-Channel | PMPAK® 5 x 6 | Surface Mount | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 30 V | 5 W 22.7 W | 18 A 38.7 A | 8-PowerLDFN | 28.8 nC | |||
YAGEO XSEMI | -55 °C | 150 °C | 3 V | 16 nC | 12 mOhm | 1760 pF | N-Channel | 8-PMPAK (3x3) | Surface Mount | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 30 V | 3.57 W | 13.7 A | 8-PowerTDFN | |||
YAGEO XSEMI | -55 °C | 150 °C | 3 V | 5 mOhm | 3040 pF | N-Channel | 8-SO | Surface Mount | 20 V | 4.5 V | MOSFET (Metal Oxide) | 30 V | 2.5 W | 17.4 A | 8-SOIC | 33.6 nC | 3.9 mm | 0.154 in | |
YAGEO XSEMI | -55 °C | 150 °C | 3 V | 41.6 nC | 4.2 mOhm | 4400 pF | N-Channel | Surface Mount | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 40 V | 5 W 52 W | 25.8 A 60 A | 8-PowerLDFN | ||||
YAGEO XSEMI | -55 °C | 150 °C | 1 V | 52 mOhm | 1440 pF | P-Channel | SOT-23 | Surface Mount | 8 V | 1.8 V 4.5 V | MOSFET (Metal Oxide) | 20 V | 1.25 W | 4 A | SC-59 SOT-23-3 TO-236-3 | 14.4 nC | |||
YAGEO XSEMI | -55 °C | 150 °C | 5 V | 1.4 Ohm | 608 pF | N-Channel | TO-252 | Surface Mount | 20 V | 10 V | MOSFET (Metal Oxide) | 700 V | 2 W 28.4 W | 3.2 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 16.8 nC |