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XP6NA3R0H - TO-252-3

XP6NA3R0H

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YAGEO XSEMI

MOSFET N-CH 60V 75A TO252

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XP6NA3R0H - TO-252-3

XP6NA3R0H

Active
YAGEO XSEMI

MOSFET N-CH 60V 75A TO252

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationXP6NA3R0H
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]112 nC
Input Capacitance (Ciss) (Max) @ Vds6520 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2 W, 83.3 W
Rds On (Max) @ Id, Vgs3 mOhm
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.91
10$ 1.51
100$ 1.03
500$ 0.82
1000$ 0.80
Digi-Reel® 1$ 1.91
10$ 1.51
100$ 1.03
500$ 0.82
1000$ 0.80
Tape & Reel (TR) 3000$ 0.67
6000$ 0.65

Description

General part information

XP6NA3R0H

N-Channel 60 V 75A (Tc) 2W (Ta), 83.3W (Tc) Surface Mount TO-252

Documents

Technical documentation and resources