XP4N4R2MT

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YAGEO XSEMI

MOSFET N CH 40V 20.7A PMPAK5X6

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YAGEO XSEMI

MOSFET N CH 40V 20.7A PMPAK5X6

Technical Specifications

Parameters and characteristics for this part

Specification	XP4N4R2MT

Current - Continuous Drain (Id) @ 25°C	25.8 A, 60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41.6 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	52 W, 5 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 25.8A (Ta), 60A (Tc) 5W (Ta), 52W (Tc) Surface Mount 8-PMPAK (5x6)

Technical documentation and resources