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PN Junction Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7)

Part	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Qualification	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Rds On (Max) @ Id, Vgs [Max]
PN Junction Semiconductor P3M12025K4	TO-247-4L	TO-247-4	-55 °C	175 ░C	577 W	112 A	2.2 V	15 V	1200 V	Through Hole	Automotive	-8 V	19 V	N-Channel	AEC-Q101	35 mOhm
PN Junction Semiconductor P3M12160K3	TO-247-3L	TO-247-3	-55 °C	175 ░C	110 W	19 A	2.4 V 2.5 mA	15 V	1200 V	Through Hole	Automotive	-8 V	21 V	N-Channel	AEC-Q101	192 mOhm
PN Junction Semiconductor P3M06300K3	TO-247-3L	TO-247-3	-55 °C	175 ░C	38 W	9 A	2.2 V 5 mA	15 V	650 V	Through Hole		-8 V	20 V	N-Channel		500 mOhm	338 pF	904 nC
PN Junction Semiconductor P3M06040K3	TO-247-3L	TO-247-3	-55 °C	175 ░C	254 W	68 A	2.4 V 7.5 mA	15 V	650 V	Through Hole	Automotive	-8 V	20 V	N-Channel	AEC-Q101	50 mOhm
PN Junction Semiconductor P3D06008I2	TO-220I-2	TO-220I-2																	21 A	36 µA	650 V	SiC (Silicon Carbide) Schottky	No Recovery Time	0 ns	175 ░C	-55 C
PN Junction Semiconductor P3D06020T2	TO-220-2	TO-220-2																	45 A	100 µA	650 V	SiC (Silicon Carbide) Schottky	No Recovery Time	0 ns	175 ░C	-55 C	1.6 V	904 pF
PN Junction Semiconductor P3M173K0T3	TO-220-2L	TO-220-2	-55 °C	175 ░C	75 W	4 A	2.2 V	15 V	1700 V	Through Hole		-8 V	19 V	N-Channel															2.6 Ohm