P3M12025K4

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PN Junction Semiconductor

SICFET N-CH 1200V 112A TO-247-4

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Active

PN Junction Semiconductor

SICFET N-CH 1200V 112A TO-247-4

Technical Specifications

Parameters and characteristics for this part

Specification	P3M12025K4

Current - Continuous Drain (Id) @ 25°C	112 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	577 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-247-4L
Vgs (Max) [Max]	19 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1200 V 112A 577W Through Hole TO-247-4L

Technical documentation and resources