P3D06020T2
ActivePN Junction Semiconductor
DIODE SIL CARB 650V 45A TO220-2
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P3D06020T2
ActivePN Junction Semiconductor
DIODE SIL CARB 650V 45A TO220-2
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | P3D06020T2 |
|---|---|
| Capacitance @ Vr, F | 904 pF |
| Current - Average Rectified (Io) | 45 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 8.84 | |
Description
General part information
P3D06020T2
Diode 650 V 45A TO-220-2
Documents
Technical documentation and resources