P3D06008I2

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PN Junction Semiconductor

DIODE SIL CARB 650V 21A TO220I-2

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PN Junction Semiconductor

DIODE SIL CARB 650V 21A TO220I-2

Technical Specifications

Parameters and characteristics for this part

Specification	P3D06008I2

Current - Average Rectified (Io)	21 A
Current - Reverse Leakage @ Vr	36 µA
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220I-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220I-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

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Distributor	Package	Quantity	$

General part information

Diode 650 V 21A TO-220I-2

Technical documentation and resources